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Outbyte Driver Updater FREEFix the driver behind crashes, sound loss and screen glitchesFind Drivers →Outbyte PC Repair FREEClear out junk files and repair common Windows errorsFree Scan →Infineon’s EDT3 IGBT chips are designed for electric vehicles with 400 V or 800 V electrical systems, while its highlighted reverse-conducting IGBT (RC-IGBT) is aimed specifically at 800 V systems. The distinction matters: a vehicle’s system voltage is not the same as the semiconductor’s blocking-voltage class. Infineon lists EDT3 chips in 750 V and 1200 V classes, and its featured RC-IGBT is a 1200 V device. The company reports lower losses for EDT3 than its previous generation, but those figures are manufacturer claims—not independently verified range gains.
What did Infineon announce?
In an April 16, 2025 product release, Infineon introduced its third-generation Electric Drive Train (EDT3) IGBT chip family for 400 V and 800 V electric-vehicle systems, along with a 1200 V RC-IGBT targeted at 800 V systems. These are bare-die components intended for customers designing their own power modules, rather than complete, drop-in inverter products. The release said samples were available at launch; it does not establish current inventory, production supply, pricing, or access eligibility. Infineon’s product release
Infineon’s automotive portfolio also includes other IGBTs and power products, so EDT3 and RC-IGBT should not be treated as labels for every IGBT the company sells. Its automotive documentation describes AEC-Q101-qualified IGBTs from 600 V to 1200 V and up to 200 A for applications including EV drivetrains and traction inverters; those portfolio-wide specifications do not mean every listed device is EDT3 or an RC-IGBT.
How do 400 V and 800 V systems relate to chip voltage classes?
“400 V” and “800 V” describe the vehicle’s high-voltage electrical system, not the maximum voltage a power semiconductor can block. An inverter switch must withstand electrical stresses in its circuit, including transient conditions, so its voltage class is a separate component specification. The product release identifies EDT3 chips in 750 V and 1200 V classes, and the RC-IGBT highlighted for 800 V systems is rated in the 1200 V class.
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| Product described in Infineon’s release | Target vehicle system | Semiconductor voltage class |
|---|---|---|
| EDT3 IGBT chips | 400 V and 800 V | 750 V and 1200 V |
| Featured RC-IGBT | 800 V | 1200 V |
The table reflects the pairings named in Infineon’s announcement, not a universal rule for selecting a device from a vehicle’s nominal bus voltage alone. The right component also depends on inverter topology, operating duty cycle, voltage stresses, thermal design, packaging, and qualification requirements.
What is an IGBT, and what makes an RC-IGBT different?
An insulated-gate bipolar transistor (IGBT) is a power switch. It combines the high-voltage and current-carrying capabilities of a bipolar transistor with gate control that requires very little steady-state input power, as in a MOSFET. In traction inverters, power switches control current delivered to the motor.
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- (PRICE/EA) MOSFET
- 25A
- 650V
- N CHANNEL
- TO-220FP; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:25A; DRAIN SOURCE VOLTAGE VDS:650V; ON R
Separate IGBT and diode chips
A conventional IGBT arrangement can use an IGBT chip alongside a separate diode chip. The diode provides a path for current when inverter operation requires it.
IGBT and diode functions on one die
An RC-IGBT integrates the IGBT and diode functions on a single semiconductor die. Infineon says this arrangement increases current density compared with separate IGBT-plus-diode chipsets and reduces assembly effort. The announcement does not quantify any resulting vehicle-level cost, size, or efficiency savings, so those should not be inferred from the chip architecture alone.
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How much more efficient does Infineon say EDT3 is?
Infineon says EDT3 delivers up to 20% lower total losses at high loads than EDT2 while maintaining low-load efficiency. That is the company’s comparison in its April 2025 launch release. The reviewed release does not provide a full test setup or independent validation, so the figure should be read as a vendor-reported chip-family performance claim, not a promised reduction in vehicle energy use or a measured increase in driving range. Infineon’s product release
A separate Infineon overview of a December technical paper reports that the company’s latest 1200 V technologies achieve 22% lower inverter losses and up to 34% higher power density versus the prior generation. Those figures relate to that separate overview and comparison; they are not the EDT3 “up to 20%” result and should not be combined with it. The overview is also vendor-published, rather than an independent matched-condition comparison. Infineon’s 1200 V technical-paper overview
Rank #4
- Can test the insulation voltage of objects at the same time. For example, switches, buttons, and insulation voltage tests between the two pins of connectors.
- It is also convenient to test the insulation between windings, such as motors, power frequency , high-frequency , phase insulation, and insulation test of shell cores
- Widely used to measure: for NIMOS/for PMOS/for IGBT/for triode/ unidirectional thyristor/ voltage regulator diode/light-emitting diode/rectifier bridge/varistor/ceramic gas discharge tube/electrolytic capacitor/withstand voltage value
- The product is small, Easy to carry and store
What do the chips and module options include?
Infineon describes EDT3 chips as bare dies for customer-designed modules. The company says custom layouts and optional on-chip temperature and current sensors are available, with metallization options for sintering, soldering, or bonding on request. Its 1200 V RC-IGBT is also described for module implementation, including in the HybridPACK Drive G2 family, with optional next-generation phase-current sensing and on-chip temperature sensing.
Infineon says HybridPACK Drive G2 incorporates EDT3 technology and offers a power range up to 250 kW in 750 V and 1200 V classes. That is a vendor-stated module-family capability, not a guarantee that every configuration reaches that power or that a bare die alone delivers it. Infineon also lists a maximum virtual junction temperature of 185°C for EDT3. This is a chip specification, not a continuous operating guarantee for an assembled module or vehicle; system thermal limits depend on the complete design. Infineon’s product release
How should engineers compare EDT3, RC-IGBT, and other options?
The announcement does not establish a universal winner among EDT3, an RC-IGBT, other silicon IGBT configurations, or silicon-carbide (SiC) devices. A useful comparison needs components evaluated in the intended inverter and vehicle context. Key factors include:
- System and blocking voltage: vehicle bus voltage, inverter topology, and the required semiconductor voltage class.
- Operating losses: high- and low-load behavior across the vehicle’s actual duty cycle, rather than one headline figure.
- Switching and thermal design: switching frequency, cooling capability, temperature limits, and lifetime requirements.
- Integration: whether the diode is integrated, plus module power, packaging, sensing, and assembly needs.
- Automotive readiness: qualification evidence, sourcing constraints, and the specific part and module configuration under consideration.
Infineon Vice President for Automotive High Voltage Chips and Discretes Robert Hermann said in the April 16, 2025 release: “As a leading provider of IGBT technology, Infineon is committed to delivering outstanding performance and reliability.” This is the company’s positioning, not independent confirmation of performance or reliability.
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